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| INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3123 DESCRIPTION *High Conversion Gain Gce = 23dB TYP. *Low Reverse Transfer Capacitance Cre = 0.4pF TYP. APPLICATIONS *Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA IB B Base Current-Continuous 25 mA PC Collector Power Dissipation @TC=25 0.15 W TJ Junction Temperature 125 Tstg Storage Temperature Range -55~125 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3123 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 20 V ICBO Collector Cutoff Current VCB= 25V; IE= 0 0.1 A IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1.0 A hFE DC Current Gain IC= 5mA ; VCE= 10V 40 300 Cre Reverse Transfer Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 0.4 0.5 pF fT Current-Gain--Bandwidth Product IC= 5mA ; VCE= 10V 900 1400 MHz Gce Conversion Gain VCC= 12V;f= 200MHz,fL= 260MHz 20 23 dB NF Noise Figure VCC= 12V;f= 200MHz,fL= 260MHz 3.8 5.5 dB isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3123 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3123 isc Websitewww.iscsemi.cn 4 |
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